{
  "annotation_id": "0dd8d93b-8f0a-494e-996c-4ffb730d8888",
  "date_created": "2026-03-02T18:00:42.993000Z",
  "date_modified": "2026-03-02T18:00:42.993000Z",
  "file_hash": "bb6ffd349e62002872dcef7641fe7b630151ec01f926ab977d38d97106fef323",
  "private": false,
  "record": {
    "abstract": "Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2\nsubstrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions.\nThe effect of annealing on the sheet resitance of unpatterned layers was\nmeasured. A Pt-based multilayered metallization for the PMOS devices was\nproposed and tested for the monolithic integration of PMOS devices and YBCO\nsensors on the same silicon substrate. The best results were obtained with a\nPt/Ti/Mo-silicide structure showing (0.472 \\Omega_{\\Box}) interconnect sheet\nresistivity and $ 2 \\times 10^{-4} \\Omega \\cdot cm^{2}$ specific contact\nresistivity after annealing for (60) minutes at (700^{\\circ})C in (0.5) mbar\nO(_{2}) pressure.",
    "arxiv_id": "physics/0305096",
    "authors": [
      "Guillaume Huot",
      "Laurence Mechin",
      "Daniel Bloyet"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "title": "Pt-based metallization of PMOS devices for the fabrication of monolithic   semiconducting/YBa2Cu3O7-d superconducting devices on silicon",
    "url": "https://arxiv.org/abs/physics/0305096"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "9ab48a48-0427-4bc1-b819-0091762e6728",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}