{
  "annotation_id": "0c4137cd-600e-4f57-a646-c97aa1bfb766",
  "date_created": "2026-03-02T18:01:17.242000Z",
  "date_modified": "2026-03-02T18:01:17.242000Z",
  "file_hash": "529f2926a386b9efb8a937f2986f14b5ca0087fb8a25da067d2fa9b807bb6281",
  "private": false,
  "record": {
    "abstract": "Silicon based micropattern detectors are essential elements of modern high\nenergy physics experiments. Cost effectiveness and high radiation resistance\nare two important requirements for technologies to be used in inner tracking\ndevices. Processes based on p-type substrates have very strong appeal for these\napplications. Recent results and prototype efforts under way are reviewed.",
    "arxiv_id": "physics/0701270",
    "authors": [
      "Marina Artuso"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1016/j.nima.2007.07.106",
    "journal_ref": "Nucl.Instrum.Meth.A582:835-838,2007",
    "title": "Silicon Sensors implemented on p-type substrates for high radiation   resistance applications",
    "url": "https://arxiv.org/abs/physics/0701270"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "14085273-9c35-4948-ae42-dfef69bc7699",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}