{
  "annotation_id": "0c34d9bb-2dea-4148-bfac-baeeee075714",
  "date_created": "2026-03-02T18:02:23.966000Z",
  "date_modified": "2026-03-02T18:02:23.966000Z",
  "file_hash": "be4aed82fcdb67d2aced0999967c2287d9def985e013ee31c361ad74ac70a54a",
  "private": false,
  "record": {
    "abstract": "We present the results of a finite-element solution of the Laplace equation\nfor the silicon-based trench-isolated double quantum-dot and the\ncapacitively-coupled single-electron transistor device architecture. This\nsystem is a candidate for charge and spin-based quantum computation in the\nsolid state, as demonstrated by recent coherent-charge oscillation experiments.\nOur key findings demonstrate control of the electric potential and electric\nfield in the vicinity of the double quantum-dot by the electric potential\napplied to the in-plane gates. This constitutes a useful theoretical analysis\nof the silicon-based architecture for quantum information processing\napplications.",
    "arxiv_id": "quant-ph/0512183",
    "authors": [
      "S. Rahman",
      "J. Gorman",
      "C. H. W. Barnes",
      "D. A. Williams",
      "H. P. Langtangen"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1103/PhysRevB.73.233307",
    "journal_ref": "Phys. Rev. B 73, 233307, (2006)",
    "title": "A finite element analysis of a silicon based double quantum dot   structure",
    "url": "https://arxiv.org/abs/quant-ph/0512183"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "65f87a79-a5be-4654-8e8d-ee94bf6d89b1",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}