dorsal/arxiv
View SchemaCharge Transport and Multiplication in Lateral Amorphous Selenium Devices Under Cryogenic Conditions
| Authors | M. Rooks, S. Abbaszadeh, J. Asaadi, V. A. Chirayath, M. Á. García-Peris, E. Gramellini, K. Hellier, B. Sudarsan, I. Tzoka |
|---|---|
| Categories | |
| ArXiv ID | 2601.08971vv1 |
| URL | https://arxiv.org/abs/2601.08971 |
| License | http://arxiv.org/licenses/nonexclusive-distrib/1.0/ |
Abstract
Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its field- and temperature-dependent transport and avalanche response in lateral geometries have not been systematically established. This work reports field-resolved photocurrent measurements of lateral a-Se devices from 93 K to 297 K under 401 nm excitation at fields up to 120 V/um. Below avalanche onset, the external quantum efficiency was described by the Onsager model, yielding effective post-thermalization separations that decrease with decreasing temperature. The field-assisted detrapping region was evaluated using several transport models, with the data favoring field-assisted hopping and thermally-assisted tunneling as the mechanisms that best capture the temperature evolution of the photocurrent. The boundaries between field-assisted detrapping, transport-limited conduction, and avalanche shift with temperature; at 93 K the response transitions directly from detrapping into avalanche. Avalanche multiplication was analyzed using the Lucky-drift model. These results provide the first systematic characterization of cryogenic avalanche behavior in lateral a-Se detectors and establish quantitative trends relevant to low-temperature, high-gain photodetector design.
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"date_created": "2026-02-17T05:53:20.016000Z",
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"abstract": "Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its field- and temperature-dependent transport and avalanche response in lateral geometries have not been systematically established. This work reports field-resolved photocurrent measurements of lateral a-Se devices from 93 K to 297 K under 401 nm excitation at fields up to 120 V/um. Below avalanche onset, the external quantum efficiency was described by the Onsager model, yielding effective post-thermalization separations that decrease with decreasing temperature. The field-assisted detrapping region was evaluated using several transport models, with the data favoring field-assisted hopping and thermally-assisted tunneling as the mechanisms that best capture the temperature evolution of the photocurrent. The boundaries between field-assisted detrapping, transport-limited conduction, and avalanche shift with temperature; at 93 K the response transitions directly from detrapping into avalanche. Avalanche multiplication was analyzed using the Lucky-drift model. These results provide the first systematic characterization of cryogenic avalanche behavior in lateral a-Se detectors and establish quantitative trends relevant to low-temperature, high-gain photodetector design.",
"arxiv_id": "2601.08971",
"authors": [
"M. Rooks",
"S. Abbaszadeh",
"J. Asaadi",
"V. A. Chirayath",
"M. \u00c1. Garc\u00eda-Peris",
"E. Gramellini",
"K. Hellier",
"B. Sudarsan",
"I. Tzoka"
],
"categories": [
"cond-mat.mtrl-sci",
"cond-mat.dis-nn"
],
"license": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
"title": "Charge Transport and Multiplication in Lateral Amorphous Selenium Devices Under Cryogenic Conditions",
"url": "https://arxiv.org/abs/2601.08971",
"version": "v1"
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