dorsal/arxiv
View SchemaA phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon
| Authors | David Cai, Niels Gronbech-Jensen, Charles M. Snell, Keith M. Beardmore |
|---|---|
| Categories | |
| ArXiv ID | physics/9901056 |
| URL | https://arxiv.org/abs/physics/9901056 |
| DOI | 10.1103/PhysRevB.54.17147 |
| Journal | Physical Review B, 54 (1996) pp. 17147-17157 |
Abstract
It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective charge theory, we develop a model for electronic stopping power for an ion, which can be factorized into (i) a globally averaged effective charge taking into account effects of close and distant collisions by target electrons with the ion, and (ii) a local charge density dependent electronic stopping power for a proton. This phenomenological model is implemented into both molecular dynamics and Monte Carlo simulations. There is only one free parameter in the model, namely, the one electron radius rs0 for unbound electrons. By fine tuning this parameter, it is shown that the model can work successfully for both boron and arsenic implants. We report that the results of the dopant profile simulation for both species are in excellent agreement with the experimental profiles measured by secondary-ion mass spectrometry(SIMS) over a wide range of energies and with different incident directions. We point out that the model has wide applicability, for it captures the correct physics of electronic stopping in ion implantation. This model also provides a good physically-based damping mechanism for molecular dynamics simulations in the electronic stopping power regime, as evidenced by the striking agreement of dopant profiles calculated in our molecular dynamics simulations with the SIMS data.
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"abstract": "It is crucial to have a good phenomenological model of electronic stopping\npower for modeling the physics of ion implantation into crystalline silicon. In\nthe spirit of the Brandt-Kitagawa effective charge theory, we develop a model\nfor electronic stopping power for an ion, which can be factorized into (i) a\nglobally averaged effective charge taking into account effects of close and\ndistant collisions by target electrons with the ion, and (ii) a local charge\ndensity dependent electronic stopping power for a proton. This phenomenological\nmodel is implemented into both molecular dynamics and Monte Carlo simulations.\nThere is only one free parameter in the model, namely, the one electron radius\nrs0 for unbound electrons. By fine tuning this parameter, it is shown that the\nmodel can work successfully for both boron and arsenic implants. We report that\nthe results of the dopant profile simulation for both species are in excellent\nagreement with the experimental profiles measured by secondary-ion mass\nspectrometry(SIMS) over a wide range of energies and with different incident\ndirections. We point out that the model has wide applicability, for it captures\nthe correct physics of electronic stopping in ion implantation. This model also\nprovides a good physically-based damping mechanism for molecular dynamics\nsimulations in the electronic stopping power regime, as evidenced by the\nstriking agreement of dopant profiles calculated in our molecular dynamics\nsimulations with the SIMS data.",
"arxiv_id": "physics/9901056",
"authors": [
"David Cai",
"Niels Gronbech-Jensen",
"Charles M. Snell",
"Keith M. Beardmore"
],
"categories": [
"physics.comp-ph",
"cond-mat.mtrl-sci",
"physics.chem-ph"
],
"doi": "10.1103/PhysRevB.54.17147",
"journal_ref": "Physical Review B, 54 (1996) pp. 17147-17157",
"title": "A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon",
"url": "https://arxiv.org/abs/physics/9901056"
},
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