{
  "annotation_id": "017fe01e-1c7d-481b-96aa-7ac43b1a1bf2",
  "date_created": "2026-03-02T18:01:00.901000Z",
  "date_modified": "2026-03-02T18:01:00.901000Z",
  "file_hash": "ad2122267bda16e429941f74f5b13fb9b11b8af4891b41ee8b5a51f3ced0a917",
  "private": false,
  "record": {
    "abstract": "In this paper we discuss the measurement of charge collection in irradiated\nsilicon pixel sensors and the comparison with a detailed simulation. The\nsimulation implements a model of radiation damage by including two defect\nlevels with opposite charge states and trapping of charge carriers. The\nmodeling proves that a doubly peaked electric field generated by the two defect\nlevels is necessary to describe the data and excludes a description based on\nacceptor defects uniformly distributed across the sensor bulk. In addition, the\ndependence of trap concentrations upon fluence is established by comparing the\nmeasured and simulated profiles at several fluences and bias voltages.",
    "arxiv_id": "physics/0506228",
    "authors": [
      "V. Chiochia",
      "M. Swartz",
      "Y. Allkofer",
      "D. Bortoletto",
      "L. Cremaldi",
      "S. Cucciarelli",
      "A. Dorokhov",
      "C. Hoermann",
      "D. Kim",
      "M. Konecki",
      "D. Kotlinski",
      "K. Prokofiev",
      "C. Regenfus",
      "T. Rohe",
      "D. A. Sanders",
      "S. Son",
      "M. Swartz",
      "T. Speer"
    ],
    "categories": [
      "physics.ins-det",
      "hep-ex"
    ],
    "doi": "10.1016/j.nima.2006.05.199",
    "journal_ref": "Nucl.Instrum.Meth.A568:51-55,2006",
    "title": "A double junction model of irradiated silicon pixel sensors for LHC",
    "url": "https://arxiv.org/abs/physics/0506228"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "b103be18-d7a4-43b9-a210-3a44ccc2ab2c",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}